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Optical Characterization and Nanophotonics Laboratory

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Graphene Spectroscopy

Members: Keith Mathew George, Bennett B. Goldberg, Eeshan Kabir, Alexander Luke Kitt, Yan Li, Zhujie Liu, Marc Mcguigan, Lina Necib, Sebastian Christoph Remi, Renfei Sun, Anna K. Swan, Xuanye Wang, Alexander Noble Wynn, Andrew Ziegler

 

Alumni: Samir Ahmed, Svetlana Anissimova, Chelsea Lynn Bartram, William Hubbard, Constanze Metzger, David Henry Newby, George Woodman Pratt, Tadeusz Janusz Pudlik, Betsy Riley, Graham Roth, Claire Kathryn Thomas, Kimberly Venta, Andrea Welsh, Yan Yin

 

Collaborators: Gorkem Soyumer

 

Graphene is a thin, monoatomic layer of graphite. Despite the fact that it is produced virtually every time a pencil is used, it was first fabricated on silicon oxide substrates in 2004. Graphene shows remarkable electronic properties. Its valence and conduction bands touch, which makes graphene a zero gap metal or semiconductor, depending on its doping level. Around the Dirac point, the point in momentum space where the bands touch, the electronic dispersion relation is linear in momentum, mimicking the behavior of mass-less relativistic particles such as photons. Therefore graphene is an exciting condensed matter model system for relativistic physics. During the last four years, a quickly growing number of physicists has been conducting research on the electronic and optical properties of graphene. In our lab, spatially resolved Raman spectroscopy on mono- and bilayer graphene samples in low temperatures is carried out. Electrical transport measurements on gated samples are also under investigation.

Fig. 1

Fig. 1 shows a confocal reflectivity scan of a graphene sample. In the white regions, the graphene sheet is adhered to the bottom of 20 nm deep etched depressions in the silicon dioxide sample.

Links

Kavli Institute of Theoretical Physics: Workshop about the "Electronic Properties of Graphene" from January 8-19 2007. Podcasts, audio and video files and slides of the speakers.

Publications

A. L. Kitt, V. M. Pereira, A. K. Swan, and B. B. Goldberg, "The correct solution for (in plane) strain-induced pseudo vector potentials in graphene," APS March Meeting, March 2012

A. L. Kitt, V. M. Pereira, A. K. Swan, and B. B. Goldberg, "Lattice-corrected strain-induced vector potentials in graphene," Physical Review B, Vol. 85, No. 115432, 1 March 2012

A. L. Kitt, V. M. Pereira, A. K. Swan, and B. B. Goldberg, "Corrections to Pseudo Vector Potentials and their effect on Pseudo Magnetic Fields," Boston Area CarbOn Nanoscience, February 2012

J. Suk, A. L. Kitt, C. Magnuson, Y. Hao, S. Ahmed, J. An, A. K. Swan, B. B. Goldberg, and R. Ruoff, "Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates," Acs Nano, Vol. 5, No. 9, 1 August 2011, pp. 6916-24

C. Metzger, S. C. Remi, M. Liu, S. V. Kusminskiy, A. H. Castro-Neto, A. K. Swan, and B. B. Goldberg, "Biaxial Strain in Graphene Adhered to Shallow Depressions," Nano Letters, Vol. 10, No. 1, 2010, pp. 6-10

S. C. Remi, C. Metzger, M. Liu, W. Hubbard, C. K. Thomas, A. K. Swan, and B. B. Goldberg, "Micro Raman studies of 1st and 2nd order Raman scattering of Graphene ," APS March meeting 2008, March 2008

S. C. Remi, W. Hubbard, M. Liu, A. K. Swan, and B. B. Goldberg, "Voltage Controlled Raman Spectroscopy of Graphene," Boston University Science and Engineering Day, 2008, 2008

S. C. Remi, B. B. Goldberg, and A. K. Swan, "Properties and applications of Graphene based sensors," Gordon CenSSIS Research and Industry Collaboration Conference 2008, 2008


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